PMD9003D Datasheet, PDF (8/15 Pages) NXP Semiconductors – MOSFET driver

NXP Semiconductors
PMD9003D
MOSFET driver
10³
h_FE
10²
10
006aaa034
(1)
(2)
(3)
1
V_CEsat
(V)
10^−1
006aaa035
(1)
(2)
(3)
1
10^−1
1
10
10²
I_C (mA)
V_CE = 5 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 5. TR1: DC current gain as a function of collector
current; typical values
10^−2
1
10
10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 6. TR1: Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa036
006aaa037
10
10
V_I(on)
(V)
(1)
(2)
1
(3)
V_I(off)
(V)
(1)
1
(2)
(3)
10^−1
10^−1
1
10
10²
I_C (mA)
V_CE = 0.3 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 7. TR1: On-state input voltage as a function of
collector current; typical values
10^−1
10^−2
10^−1
1
10
I_C (mA)
V_CE = 5 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 8. TR1: Off-state input voltage as a function of
collector current; typical values
PMD9003D_1
Product data sheet
Rev. 01 — 24 November 2006
© NXP B.V. 2006. All rights reserved.
8 of 15