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PMD9003D Datasheet, PDF (1/15 Pages) NXP Semiconductors – MOSFET driver
PMD9003D
MOSFET driver
Rev. 01 — 24 November 2006
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and
high-speed switching diode connected in totem pole configuration in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
1.2 Features
I Two transistors and one high-speed switching diode as driver
I Totem pole configuration
I Application-optimized pinout
I Internal connections to minimize layout effort
I Space-saving solution
I Reduces component count
1.3 Applications
I MOSFET driver
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor
IC
collector current
Transistor 2 (TR2)
-
-
0.1 A
VCEO
ICM
collector-emitter voltage
peak collector current
Diode (D1)
open base
single pulse;
tp ≤ 1 ms
-
-
45
V
-
-
0.2 A
IF
forward current
VF
forward voltage
-
-
−0.2 A
IF = −200 mA [1] -
-
−1.1 V
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.