PMD9003D Datasheet, PDF (10/15 Pages) NXP Semiconductors – MOSFET driver

NXP Semiconductors
PMD9003D
MOSFET driver
1
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V_CEsat
(V)
10^−1
(1)
(2)
(3)
V_CEsat
(V)
10^−1
(1)
(2)
(3)
10^−2
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 13. TR2: Collector-emitter saturation voltage as a
function of collector current; typical values
8. Test information
10^−2
10^−1
1
10
10²
10³
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig 14. TR2: Collector-emitter saturation voltage as a
function of collector current; typical values
oscilloscope ^(probe)
450 Ω
V_I
V_CC
RC
DUT
R1
TR2
V_O
D1
TR1
R2
(probe)
oscilloscope
450 Ω
I_C = 0.05 A; I_B = 1 mA; R_C = 180 Ω
Fig 15. Test circuit for switching times
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PMD9003D_1
Product data sheet
Rev. 01 — 24 November 2006
© NXP B.V. 2006. All rights reserved.
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