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| PMD9003D Datasheet, PDF (7/15 Pages) NXP Semiconductors – MOSFET driver | |||
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NXP Semiconductors
PMD9003D
MOSFET driver
Table 7. Characteristics â¦continued
Tamb = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
VBEsat
VBE
base-emitter saturation
voltage
base-emitter voltage
Diode (D1)
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
VCE = 5 V; IC = 2 mA
VCE = 5 V; IC = 10 mA
VF
forward voltage
TR2 and D1
IF = â200 mA
hFE
DC current gain
Device
VCE = 5 V; IC = 1 mA
VCE = 5 V; IC = 100 mA
VCE = 5 V; IC = 200 mA
td
delay time
tr
rise time
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
IC = 0.05 A; IB = 1 mA
[1] Pulse test: tp ⤠300 µs; δ ⤠0.02.
Min
-
-
610
-
[1] -
200
95
24
-
-
-
-
-
-
Typ Max Unit
0.7 -
V
0.9 -
V
660 710 mV
-
770 mV
-
â1.1 V
290 450
140 -
35 -
20 -
ns
94 -
ns
114 -
ns
904 -
ns
253 -
ns
1157 -
ns
PMD9003D_1
Product data sheet
Rev. 01 â 24 November 2006
© NXP B.V. 2006. All rights reserved.
7 of 15
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