PHP54N06T Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PHP54N06T
N-channel TrenchMOS standard level FET
10
V_GS
(V)
8
V_DD = 11 V
003aaa068
6
V_DD = 44 V
4
2
0
0 5 10 15 20 25 30 35 40
Q_G (nC)
C_iss, ²⁵⁰⁰
C_oss,
C_rss
C_iss
(pF) ₂₀₀₀
C_oss
1500
C_rss
1000
500
0
10^−2
10^−1
1
03nc65
10
10²
V_DS (V)
Fig 13. Gate-source voltage as a function of gate
charge; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
120
I_S
(A)
100
03nc58
80
T_j = 175 °C
60
T_j = 25 °C
40
20
0
0.0
0.5
1.0 _{VSD (V)} 1.5
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
PHP54N06T_2
Product data sheet
Rev. 02 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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