PHP54N06T Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PHP54N06T
N-channel TrenchMOS standard level FET
120
I_D
(A)
100
03nc61
80
T_j = 25 °C
60
T_j = 175 °C
40
20
0
0
2
4
6
8
10
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
max
typ
min
03aa32
60
120
180
T_j (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
45
R_DSon
(mΩ)
40
35
5.5 6 6.5 7
03nc64
8 V_GS (V) = 10
2.4
a
1.8
03aa28
30
1.2
25
0.6
20
15
0
50
100
150
I_D (A)
0
−60
0
60
120
180
T_j (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
PHP54N06T_2
Product data sheet
Rev. 02 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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