PHP54N06T Datasheet, PDF (6/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

NXP Semiconductors
PHP54N06T
N-channel TrenchMOS standard level FET
I_D ²⁰⁰
(A) ₁₈₀
160
140
03nc63
V_GS (V) =
20
14
12
11
10
120
9.0
100
8.5
8.0
80
7.5
7.0
60
6.5
40
6.0
20
5.5
5.0
0
4.5
0
2
4
6
8
10
V_DS (V)
30
R_DSon
(mΩ)
25
03nc62
20
15
10
5
10
15
20
25
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of drain current; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
25
g_fs
(S)
20
03nc60
10^−3
15
10^−4
10
10^−5
5
10^−6
0
2
4
6
V_GS (V)
0
0
20
40
60
80
I_D (A)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
PHP54N06T_2
Product data sheet
Rev. 02 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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