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PHP54N06T Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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NXP Semiconductors
PHP54N06T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min
Static characteristics
V(BR)DSS
VGS(th)
IDSS
IGSS
RDSon
drain-source
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
50
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
55
gate-source threshold ID = 1 mA; VDS= VGS; Tj = 175 °C; see Figure 10 1
voltage
ID = 1 mA; VDS= VGS; Tj = -55 °C; see Figure 10 -
ID = 1 mA; VDS= VGS; Tj = 25 °C; see Figure 10 2
drain leakage current VDS = 55 V; VGS = 0 V; Tj = 25 °C
-
VDS = 55 V; VGS = 0 V; Tj = 175 °C
-
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 175 °C;
-
resistance
see Figure 11 and 12
VGS = 10 V; ID = 25 A; Tj = 25 °C;
-
see Figure 11 and 12
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
ID = 40 A; VDS = 44 V; VGS = 10 V; Tj = 25 °C;
-
gate-source charge
see Figure 13
-
gate-drain charge
-
input capacitance
VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
output capacitance
see Figure 14
-
reverse transfer
-
capacitance
td(on)
tr
td(off)
tf
LD
LS
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
-
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
from drain lead 6 mm from package to centre of -
die; Tj = 25 °C
from contact screw on mounting base to centre -
of die; Tj = 25 °C
from source lead to source bond pad; Tj = 25 °C -
Source-drain diode
VSD
source-drain voltage IS = 20 A; VGS = 0 V; Tj = 25 °C; see Figure 15 -
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
-
Qr
recovered charge
VDS = 30 V; Tj = 25 °C
-
Typ Max Unit
-
-
V
-
-
V
-
-
V
-
4.4 V
3
4
V
0.05 10
µA
-
500 µA
2
100 nA
2
100 nA
-
40
mΩ
17
20
mΩ
36
-
nC
8.4 -
nC
11.5 -
nC
1200 1592 pF
290 356 pF
179 240 pF
15
-
ns
74
-
ns
70
-
ns
40
-
ns
4.5 -
nH
3.5 -
nH
7.5 -
nH
0.85 1.2 V
45
-
ns
110 -
nC
PHP54N06T_2
Product data sheet
Rev. 02 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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