PHP101NQ03LT Datasheet, PDF (8/13 Pages) NXP Semiconductors – TrenchMOS logic level FET

NXP Semiconductors
PHP101NQ03LT
N-channel TrenchMOS logic level FET
03ai23
16
2
R_DSon
(mΩ)
T_j = 25 °C
V_GS (V) = 3.8
a
12
1.5
4
8
4.5
1
5
10
4
0.5
03af18
0
0
20
40
60 _{ID (A)} 80
0
-60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function
of drain current; typical values
Fig 10. Normalized drain-source on-state resistance
factor as a function of junction temperature
10
V_GS
(V)
8
I_D = 50 A
T_j = 25 °C
V_DS = 15 V
6
4
03ai27
10⁴
C
(pF)
10³
03ai26
C_iss
C_oss
2
0
0
10
20
30
40
50
Q_G (nC)
10²
10^-1
1
C_rss
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP101NQ03LT_4
Product data sheet
Rev. 04 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
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