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PHP101NQ03LT Datasheet, PDF (6/13 Pages) NXP Semiconductors – TrenchMOS logic level FET
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NXP Semiconductors
PHP101NQ03LT
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Static characteristics
V(BR)DSS drain-source
breakdown voltage
VGS(th)
gate-source threshold
voltage
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage
trr
reverse recovery time
Qr
recovered charge
Conditions
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C;
see Figure 7; see Figure 8
ID = 1 mA; VDS = VGS; Tj = 175 °C;
see Figure 7; see Figure 8
ID = 1 mA; VDS = VGS; Tj = 25 °C;
see Figure 7; see Figure 8
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VDS = 30 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 9; see Figure 10
VGS = 5 V; ID = 25 A; Tj = 175 °C;
see Figure 9; see Figure 10
VGS = 5 V; ID = 25 A; Tj = 25 °C;
see Figure 9; see Figure 10
ID = 50 A; VDS = 15 V; VGS = 5 V;
Tj = 25 °C; see Figure 11
VDS = 25 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 12
VDS = 15 V; RL = 0.6 Ω; VGS = 4.5 V;
RG(ext) = 5.6 Ω; Tj = 25 °C; ID = 25 A
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 13
IS = 10 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
Min Typ Max Unit
27
-
30
-
-
-
-
V
-
V
2.9 V
0.6 -
-
V
1
1.9 2.5 V
-
0.05 1
µA
-
-
500 µA
-
10
100 nA
-
10
100 nA
-
4.5 5.5 mΩ
-
10.5 13.5 mΩ
-
5.8 7.5 mΩ
-
23
-
nC
-
10.5 -
nC
-
8
-
nC
-
2180 -
pF
-
600 -
pF
-
225 -
pF
-
23
-
ns
-
90
-
ns
-
37
-
ns
-
33
-
ns
-
0.85 1.2 V
-
37
-
ns
-
33
-
nC
PHP101NQ03LT_4
Product data sheet
Rev. 04 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
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