PHP101NQ03LT Datasheet, PDF (7/13 Pages) NXP Semiconductors – TrenchMOS logic level FET

NXP Semiconductors
PHP101NQ03LT
N-channel TrenchMOS logic level FET
80
I_D
(A)
60
V_GS (V) = ¹⁰
T_j = 25 °C
5 4.5
40
20
0
0
0.2
0.4
0.6
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4
3.8
3.6
3.4
3.2
3
2.8
0.8
1
V_DS (V)
80
I_D
(A)
60
03ai24
40
20
175 °C
T_j = 25 °C
0
0
1
2
3 _{VGS (V)} 4
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
3.2
V_GS(th)
(V)
2.4
1.6
0.8
max
typ
min
03ai29
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
03ai28
min
typ
max
0
-60
0
60
120
180
T_j (°C)
10^-6
0
0.8
1.6
2.4
3.2
V_GS(V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PHP101NQ03LT_4
Product data sheet
Rev. 04 — 2 March 2009
© NXP B.V. 2009. All rights reserved.
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