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| PDTC143XT.215 Datasheet, PDF (8/17 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ | |||
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NXP Semiconductors
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kï, R2 = 10 kï
103
hFE
102
10
006aac841
(1)
(2)
(3)
1
VCEsat
(V)
10-1
006aac842
(1)
(2)
(3)
1
10-1
1
10
102
IC (mA)
VCE = 5 V
(1) Tamb = 100 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = ï40 ï°C
Fig 6. DC current gain as a function of collector
current; typical values
006aac843
10
VI(on)
(V)
1
(1)
(2)
(3)
10-2
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = ï40 ï°C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac844
10
VI(off)
(V)
1
(1)
(2)
(3)
10-1
10-1
1
10
102
IC (mA)
VCE = 0.3 V
(1) Tamb = ï40 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = 100 ï°C
Fig 8. On-state input voltage as a function of
collector current; typical values
10-1
10-1
1
10
IC (mA)
VCE = 5 V
(1) Tamb = ï40 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = 100 ï°C
Fig 9. Off-state input voltage as a function of
collector current; typical values
PDTC143X_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 â 9 December 2011
© NXP B.V. 2011. All rights reserved.
8 of 17
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