PDTC143XT.215 Datasheet, PDF (3/17 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ

NXP Semiconductors
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CEO
V_EBO
V_I
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
open emitter
-
open base
-
open collector
-
-
negative
-
I_O
output current
-
I_CM
peak collector current
single pulse;
-
t_p  1 ms
P_tot
total power dissipation
T_amb  25 C
PDTC143XE (SOT416)
[1][2] _-
PDTC143XM (SOT883)
[2][3] _-
PDTC143XT (SOT23)
[1] _-
PDTC143XU (SOT323)
[1] _-
T_j
junction temperature
-
T_amb
ambient temperature
65
T_stg
storage temperature
65
Max Unit
50
V
50
V
7
V
+20 V
7
V
100
mA
100
mA
150
mW
250
mW
250
mW
200
mW
150
C
+150 C
+150 C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.
PDTC143X_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 — 9 December 2011
© NXP B.V. 2011. All rights reserved.
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