 English |
|
|
|
|
|
|
|
| PDTC143XT.215 Datasheet, PDF (7/17 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ | |||
| |||
| ◁ |
NXP Semiconductors
PDTC143X series
NPN resistor-equipped transistors; R1 = 4.7 kï, R2 = 10 kï
7. Characteristics
Table 8. Characteristics
Tamb = 25 ï°C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
-
-
100 nA
ICEO
IEBO
collector-emitter
cut-off current
emitter-base cut-off
current
VCE = 30 V; IB = 0 A
VCE = 30 V; IB = 0 A;
Tj = 150 ï°C
VEB = 5 V; IC = 0 A
-
-
1
ïA
-
-
5
ïA
-
-
600 ïA
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 5 V; IC = 10 mA
IC = 10 mA; IB = 0.5 mA
50
-
-
-
-
100 mV
VI(off)
VI(on)
R1
off-state input voltage
on-state input voltage
bias resistor 1 (input)
VCE = 5 V; IC = 100 ïA
VCE = 0.3 V; IC = 20 mA
-
0.9 0.3 V
2.5 1.5 -
V
3.3 4.7 6.1 kï
R2/R1 bias resistor ratio
1.7 2.1 2.6
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
-
-
2.5 pF
f = 1 MHz
fT
transition frequency VCE = 5 V; IC = 10 mA; [1] -
230 -
MHz
f = 100 MHz
[1] Characteristics of built-in transistor
PDTC143X_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 11 â 9 December 2011
© NXP B.V. 2011. All rights reserved.
7 of 17
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese