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| PDTA114EU.115 Datasheet, PDF (8/17 Pages) NXP Semiconductors – PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages. | |||
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NXP Semiconductors
PDTA114E series
PNP resistor-equipped transistors; R1 = 10 kï, R2 = 10 kï
103
hFE
102
10
006aac773
(1)
(2)
(3)
-1
VCEsat
(V)
-10-1
006aac774
(1)
(2)
(3)
1
-10-1
-1
-10
-102
IC (mA)
VCE = ï5 V
(1) Tamb = 100 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = ï40 ï°C
Fig 6. DC current gain as a function of collector
current; typical values
006aac775
-10
VI(on)
(V)
(1)
(2)
-1
(3)
-10-2
-1
-10
-102
IC (mA)
IC/IB = 20
(1) Tamb = 100 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = ï40 ï°C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac776
-10
VI(off)
(V)
(1)
(2)
-1
(3)
-10-1
-10-1
-1
-10
-102
IC (mA)
VCE = ï0.3 V
(1) Tamb = ï40 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = 100 ï°C
Fig 8. On-state input voltage as a function of
collector current; typical values
-10-1
-10-1
-1
-10
IC (mA)
VCE = ï5 V
(1) Tamb = ï40 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = 100 ï°C
Fig 9. Off-state input voltage as a function of
collector current; typical values
PDTA114E_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 10 â 21 December 2011
© NXP B.V. 2011. All rights reserved.
8 of 17
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