PDTA114EU.115 Datasheet, PDF (7/17 Pages) NXP Semiconductors – PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages.

NXP Semiconductors
PDTA114E series
PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k
7. Characteristics
Table 8. Characteristics
T_amb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base
cut-off current
V_CB = 50 V; I_E = 0 A
I_CEO
collector-emitter
V_CE = 30 V; I_B = 0 A
cut-off current
V_CE = 30 V; I_B = 0 A;
T_j = 150 C
I_EBO
emitter-base
cut-off current
V_EB = 5 V; I_C = 0 A
h_FE
DC current gain
V_CE = 5 V; I_C = 5 mA
V_CEsat
V_I(off)
V_I(on)
collector-emitter
saturation voltage
off-state input
voltage
on-state input
voltage
I_C = 10 mA;
I_B = 0.5 mA
V_CE = 5 V;
I_C = 100 A
V_CE = 0.3 V;
I_C = 10 mA
R1
bias resistor 1 (input)
R2/R1 bias resistor ratio
C_c
collector capacitance V_CB = 10 V;
I_E = i_e = 0 A; f = 1 MHz
f_T
transition frequency V_CE = 5 V;
I_C = 10 mA;
f = 100 MHz
[1] Characteristics of built-in transistor.
Min
-
-
-
-
30
-
-
2.5
7
0.8
-
[1] _-
Typ
-
-
-
-
-
-
1.1
1.8
10
1.0
-
180
Max Unit
100 nA
1
A
5
A
400 A
-
150 mV
0.8 V
-
V
13
k
1.2
3
pF
-
MHz
PDTA114E_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 10 — 21 December 2011
© NXP B.V. 2011. All rights reserved.
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