PDTA114EU.115 Datasheet, PDF(3/17 Page) NXP Semiconductors – PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages.

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PDTA114EU.115 Datasheet, PDF (3/17 Pages) NXP Semiconductors – PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages.

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NXP Semiconductors

PDTA114E series

PNP resistor-equipped transistors; R1 = 10 kï, R2 = 10 kï

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

VCBO

collector-base voltage

open emitter

VCEO

collector-emitter voltage open base

VEBO

emitter-base voltage

open collector

input voltage

positive

negative

output current

ICM

peak collector current

single pulse; tp ï£ 1 ms

Ptot

total power dissipation

Tamb ï£ 25 ï°C

PDTA114EE (SOT416)

[1][2] -

PDTA114EM (SOT883)

[2][3] -

PDTA114ET (SOT23)

[1] -

PDTA114EU (SOT323)

[1] -

junction temperature

Tamb

ambient temperature

ï65

Tstg

storage temperature

ï65

Max Unit

ï50 V

ï10 V

+40 V

ï10 V

ï100 mA

150 mW

250 mW

200 mW

150 ï°C

+150 ï°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 70 ïm copper strip line, standard footprint.

PDTA114E_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 10 â 21 December 2011

3 of 17

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