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PBRP123ET Datasheet, PDF (8/12 Pages) NXP Semiconductors – PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW | |||
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NXP Semiconductors
PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kâ¦, R2 = 2.2 kâ¦
â10
VI(on)
(V)
â1
006aab089
(1)
(2)
(3)
â10
VI(off)
(V)
â1
006aab090
(1)
(2)
(3)
â10â1
â10â1
â1
â10
â102
â103
IC (mA)
â10â1
â10â1
â1
â10
â102
IC (mA)
VCE = â0.3 V
(1) Tamb = â40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 9. On-state input voltage as a function of collector
current; typical values
VCE = â5 V
(1) Tamb = â40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 10. Off-state input voltage as a function of collector
current; typical values
8. Package outline
2.5 1.4
2.1 1.2
3.0
2.8
3
1.1
0.9
0.45
0.15
1
1.9
Dimensions in mm
Fig 11. Package outline SOT23 (TO-236AB)
2
0.48
0.38
0.15
0.09
04-11-04
PBRP123ET_1
Product data sheet
Rev. 01 â 16 January 2008
© NXP B.V. 2008. All rights reserved.
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