PBRP123ET Datasheet, PDF (6/12 Pages) NXP Semiconductors – PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW

NXP Semiconductors
PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
7. Characteristics
Table 7. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
I_CEO
I_EBO
h_FE
V_CEsat
V_I(off)
V_I(on)
R1
collector-base cut-off
current
collector-emitter cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage
on-state input voltage
bias resistor 1 (input)
V_CB = −30 V;
I_E = 0 A
V_CE = −30 V;
I_B = 0 A
V_EB = −5 V;
I_C = 0 A
V_CE = −5 V;
I_C = −50 mA
V_CE = −5 V;
I_C = −300 mA
V_CE = −5 V;
I_C = −600 mA
I_C = −50 mA;
I_B = −2.5 mA
I_C = −200 mA;
I_B = −10 mA
I_C = −500 mA;
I_B = −10 mA
I_C = −600 mA;
I_B = −6 mA
V_CE = −5 V;
I_C = −100 µA
V_CE = −0.3 V;
I_C = −20 mA
R2/R1
bias resistor ratio
C_c
collector capacitance V_CB = −10 V;
I_E = i_e = 0 A;
f = 1 MHz
[1] Pulse test: t_p ≤ 300 µs; δ ≤ 0.02.
Min Typ Max Unit
-
-
−100 nA
-
-
−0.5 µA
-
-
−2
mA
70
120 -
[1] _{180 250 -}
[1] _{170 240 -}
-
−35 −45 mV
-
−70 −100 mV
[1] _-
−200 −300 mV
[1] _-
−450 −750 mV
−0.6 −1
−1.8 V
−1
−1.3 −2
V
1.54 2.2
0.9 1
-
11
2.86 kΩ
1.1
-
pF
PBRP123ET_1
Product data sheet
Rev. 01 — 16 January 2008
© NXP B.V. 2008. All rights reserved.
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