PBRP123ET Datasheet, PDF (1/12 Pages) NXP Semiconductors – PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW

PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 16 January 2008
Product data sheet
1. Product profile
1.1 General description
800 mA PNP low V_CEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBRN123ET.
1.2 Features
I 800 mA repetitive peak output current
I High current gain h_FE
I Built-in bias resistors
I Simplifies circuit design
I Low collector-emitter saturation voltage
V_CEsat
I Reduces component count
I Reduces pick and place costs
I ±10 % resistor ratio tolerance
1.3 Applications
I Digital application in automotive and
industrial segments
I Medium current peripheral driver
I Switching loads
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ
V_CEO
collector-emitter voltage
open base
-
-
I_O
output current
[1][2] _-
-
I_ORM
repetitive peak output current t_p ≤ 1 ms;
[3] _-
-
δ ≤ 0.33
R1
bias resistor 1 (input)
1.54 2.2
R2/R1
bias resistor ratio
0.9 1
Max Unit
−40 V
−600 mA
−800 mA
2.86 kΩ
1.1
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
collector 1 cm².
[2] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.