PBRP123ET Datasheet, PDF (7/12 Pages) NXP Semiconductors – PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW

NXP Semiconductors
PBRP123ET
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ
10³
h_FE
10²
10
006aab085
(1)
(2)
(3)
1
10^−1
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = −5 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 5. DC current gain as a function of collector
current; typical values
−1
006aab087
V_CEsat
(V)
−10^−1
(1)
(2)
(3)
−10^−1
V_CEsat
(V)
006aab086
(1)
(2)
(3)
−10^−2
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
−1
006aab088
V_CEsat
(V)
−10^−1
(1)
(2)
(3)
−10^−2
−10
−10²
I_C (mA)
−10³
I_C/I_B = 50
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
−10^−2
−10
−10²
I_C (mA)
−10³
I_C/I_B = 100
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
PBRP123ET_1
Product data sheet
Rev. 01 — 16 January 2008
© NXP B.V. 2008. All rights reserved.
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