BCP52 Datasheet, PDF (8/12 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER

NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
300
h_FE
200
100
006aaa226
(1)
(2)
(3)
−1.6
I_C
(A)
−1.2
−0.8
−0.4
006aaa230
I_B (mA) = −45 −40.5 −36
−31.5
−27
−22.5
−18
−13.5
−9
−4.5
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 8. DC current gain as a function of collector
current; typical values
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
V_CE (V)
T_amb = 25 °C
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
−1200
V_BE
(mV)
−1000
− 800
− 600
− 400
006aaa227
(1)
(2)
(3)
− 200
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 10. Base-emitter voltage as a function of collector
current; typical values
−10³
V_CEsat
(mV)
−10²
006aaa228
(2) (1)
(3)
−10
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
I_C/I_B = 10
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
BCP52_BCX52_8
Product data sheet
Rev. 08 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
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