BCP52 Datasheet, PDF (4/12 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER

NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
1.6
P_tot
(W)
1.2
(1)
0.8
(2)
0.4
006aaa220
1.6
P_tot
(W)
(1)
1.2
(2)
0.8
(3)
0.4
006aaa221
0
−75
−25 0 25
75
125
175
T_amb (°C)
(1) FR4 PCB, mounting pad for collector 1 cm²
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves SOT223
0
−75
−25 0 25
75
125
175
T_amb (°C)
(1) FR4 PCB, mounting pad for collector 6 cm²
(2) FR4 PCB, mounting pad for collector 1 cm²
(3) FR4 PCB, standard footprint
Fig 2. Power derating curves SOT89
6. Thermal characteristics
Table 7.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
BCP52
Conditions
in free air
BCX52
R_th(j-sp)
thermal resistance from
junction to solder point
BCP52
BCX52
Min Typ Max Unit
[1] _-
-
190 K/W
[2] _-
-
125 K/W
[1] _-
-
230 K/W
[2] _-
-
135 K/W
[3] _-
-
95
K/W
-
-
17
K/W
-
-
20
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².
BCP52_BCX52_8
Product data sheet
Rev. 08 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
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