BCP52 Datasheet, PDF (3/12 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER

NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
collector-base voltage
open emitter
-
collector-emitter voltage
open base
-
emitter-base voltage
open collector
-
collector current
-
peak collector current
single pulse;
-
t_p ≤ 1 ms
peak base current
single pulse;
-
t_p ≤ 1 ms
total power dissipation
T_amb ≤ 25 °C
BCP52
[1] _-
[2] _-
BCX52
[1] _-
[2] _-
[3] _-
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
−60
V
−60
V
−5
V
−1
A
−1.5 A
−0.2 A
0.65 W
1
W
0.5
W
0.9
W
1.3
W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm².
BCP52_BCX52_8
Product data sheet
Rev. 08 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
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