BCP52 Datasheet, PDF (7/12 Pages) STMicroelectronics – MEDIUM POWER AMPLIFIER

NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
10³
Z_th(j-a)
(K/W)
duty cycle =
10²
1.0
0.75
0.5
0.33
0.2
10
0.1
0.05
0.02
0.01
1
0
006aaa818
10^−1
10^−5
10^−4
10^−3
10^−2
10^−1
1
10
10²
10³
t_p (s)
FR4 PCB, mounting pad for collector 6 cm²
Fig 7. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
7. Characteristics
Table 8. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
I_CBO
collector-base cut-off V_CB = −30 V; I_E = 0 A;
current
V_CB = −30 V; I_E = 0 A;
T_j = 150 °C
I_EBO
emitter-base cut-off V_EB = −5 V; I_C = 0 A
current
-
-
−100 nA
-
-
−10 µA
-
-
−100 nA
h_FE
V_CEsat
V_BE
C_c
DC current gain
V_CE = −2 V
I_C = −5 mA
63 -
I_C = −150 mA
63 -
I_C = −500 mA
[1] ₄₀
-
DC current gain
V_CE = −2 V
h_FE selection -10
I_C = −150 mA
63 -
h_FE selection -16
I_C = −150 mA
100 -
collector-emitter
saturation voltage
I_C = −500 mA;
I_B = −50 mA
[1] _-
-
base-emitter voltage V_CE = −2 V; I_C = −500 mA ^[1] -
-
collector capacitance V_CB = −10 V; I_E = i_e = 0 A;
-
15
f = 1 MHz
-
250
-
160
250
−0.5 V
−1 V
-
pF
f_T
transition frequency V_CE = −5 V; I_C = −50 mA;
-
145 -
MHz
f = 100 MHz
[1] Pulse test: t_p ≤ 300 µs; δ = 0.02.
BCP52_BCX52_8
Product data sheet
Rev. 08 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
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