BC869 Datasheet, PDF (8/11 Pages) NXP Semiconductors – PNP medium power transistor

NXP Semiconductors
PNP medium power transistor;
20 V, 1 A
−2.4
handb_Io_Cok, halfpage
(A)
−2.0
−1.6
−1.2
−0.8
−0.4
MLE313
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
−1
BC869-25.
(1) I_B = −12 mA.
(2) I_B = −10.8 mA.
(3) I_B = −9.6 mA.
(4) I_B = −8.4 mA.
−2
−3
(5) I_B = −7.2 mA.
(6) I_B = −6.0 mA.
(7) I_B = −4.8 mA.
(8) I_B = −3.6 mA.
−4
−5
VCE (V)
(9) I_B = −2.4 mA.
(10) I_B = −1.2 mA.
Fig.9 Collector current as a function of
collector-emitter voltage; typical values.
handboo^−k¹, halfpage
VBE
(V)
Product data sheet
BC869
MLE318
−10^−1
−10^−4
−10^−3
−10^−2
−10^−1
−1
−10
IC (A)
BC869-25.
V_CE = −1 V.
Fig.10 Base-emitter voltage as function of collector
current; typical values.
handbo¹o⁰k³, halfpage
hFE
MLE315
handbook,^−h¹alfpage
VCEsat
(V)
−10^−1
MLE316
−10^−2
10²
−10^−4
−10^−3
−10^−2
−10^−1
−1
−10
IC (mA)
BC869-25.
V_CE = −1 V.
Fig.11 DC current gain as a function of collector
current; typical values.
−10^−3
−10^−4
−10^−3
−10^−2
−10^−1
−1
−10
IC (A)
BC869-25.
I_C/I_B = 10.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 08
8