BC869 Datasheet, PDF (4/11 Pages) NXP Semiconductors – PNP medium power transistor

NXP Semiconductors
PNP medium power transistor;
20 V, 1 A
Product data sheet
BC869
handbook¹, ^.h⁶alfpage
Ptot
(W)
(1)
1.2
(2)
0.8
(3)
0.4
MLE323
0
-65
-5
55
115
175
Tamb (°C)
(1) FR4 PCB; 6 cm² mounting pad for collector.
(2) FR4 PCB; 1 cm² mounting pad for collector.
(3) Standard footprint.
Fig.1 Power derating curves.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R_th(j-a)
R_th(j-s)
thermal resistance from junction to ambient
thermal resistance from junction to solder point
T_amb ≤ 25 °C
notes 1 and 2
notes 1 and 3
notes 1 and 4
T_amb ≤ 25 °C
250
K/W
147
K/W
104
K/W
20
K/W
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm².
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm².
2004 Nov 08
4