BC869 Datasheet, PDF (3/11 Pages) NXP Semiconductors – PNP medium power transistor

NXP Semiconductors
PNP medium power transistor;
20 V, 1 A
Product data sheet
BC869
ORDERING INFORMATION
TYPE NUMBER
BC869
BC869-16
BC869-25
NAME
SC-62
PACKAGE
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_BM
P_tot
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
T_stg
T_j
T_amb
storage temperature
junction temperature
ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C
notes 1 and 2
notes 1 and 3
notes 1 and 4
MIN.
−
−
−
−
−
−
MAX.
−32
−20
−5
−1
−2
−200
UNIT
V
V
V
A
A
mA
−
0.5
W
−
0.85
W
−
1.2
W
−65
+150
°C
−
150
°C
−65
+150
°C
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm².
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm².
2004 Nov 08
3