BC869 Datasheet, PDF (6/11 Pages) NXP Semiconductors – PNP medium power transistor

NXP Semiconductors
PNP medium power transistor;
20 V, 1 A
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
C_c
f_T
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
V_CB = −25 V; I_E = 0 A
V_CB = −25 V; I_E = 0 A
V_EB = −5 V; I_C = 0 A
BC869
V_CE = −10 V; I_C = −5 mA
V_CE = −1 V; I_C = −500 mA
V_CE = −1 V; I_C = −1 A
BC869−16
V_CE = −1 V; I_C = −500 mA
BC869−25
V_CE = −1 V; I_C = −500 mA
I_C = −1 A; I_B = −100 mA
V_CE = −10 V; I_C = −5 mA
V_CE = −1 V; I_C = −1 A
I_E = i_e = 0 A; V_CB = −10 V;
f = 1 MHz
V_CE = −5 V; I_C = −50 mA;
f = 100 MHz
Product data sheet
BC869
MIN.
−
−
−
TYP.
−
−
−
MAX. UNIT
−100 nA
−10 μA
−100 nA
50
−
−
85
−
375
60
−
−
100 −
250
160 −
−
−
−
−
−
−
−
28
375
−500 mV
−700 mV
−1
V
−
pF
40
140 −
MHz
2004 Nov 08
6