PSMN2R6-60PS Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78

NXP Semiconductors
PSMN2R6-60PS
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
500
I_D
(A)
400
003aah667
5
V_GS(th)
(V)
4
003aah027
max
300
3
typ
200
2
min
100
T_j = 175 °C
1
T_j = 25 °C
0
0
2
4
6 _VGS(V) 8
Fig. 8. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 9. Gate-source threshold voltage as a function of
junction temperature
10^-1
I_D
(A)
10^-2
10^-3
003aah028
min
typ max
10^-4
10^-5
10^-6
0
2
4
6
V_GS(V)
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage
15
R_DSon
(mΩ)
10
5
003aah670
5.5
6
5
8
V_GS(V) = 10
0
0
100
200
300 _ID(A) 400
T_j = 25 °C; t_p = 300 μs
Fig. 11. Drain-source on-state resistance as a function
of drain current; typical values
PSMN2R6-60PS
Product data sheet
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5 February 2013
© NXP B.V. 2013. All rights reserved
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