PSMN2R6-60PS Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78

PSMN2R6-60PS
N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78
5 February 2013
Product data sheet
1. General description
Standard level N-channel MOSFET in SOT78 using TrenchMOS technology. Product
design and manufacture has been optimized for use in battery operated power tools.
2. Features and benefits
• High efficiency due to low switching & conduction losses
• Robust construction for demanding applications
• Standard level gate
3. Applications
• Battery-powered tools
• Load switching
• Motor control
• Uninterruptible power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
P_tot
total power dissipation T_mb = 25 °C; Fig. 2
Static characteristics
R_DSon
drain-source on-state V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
resistance
Fig. 11
Dynamic characteristics
Q_G(tot)
Q_GD
total gate charge
gate-drain charge
I_D = 25 A; V_DS = 48 V; V_GS = 10 V;
Fig. 13; Fig. 14
[1] Continuous current is limited by package.
Min Typ Max Unit
-
-
60
V
[1]
-
-
150 A
-
-
326 W
-
1.97 2.6 mΩ
-
140 -
nC
-
43.7 -
nC
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