 English |
|
|
|
|
|
|
|
| PSMN2R6-60PS Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 | |||
| |||
| ◁ |
NXP Semiconductors
PSMN2R6-60PS
N-channel 60 V, 2.6 m⦠standard level MOSFET in SOT78
Symbol
Parameter
Conditions
QGD
gate-drain charge
Ciss
input capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Coss
output capacitance
Tj = 25 °C; Fig. 15
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 45 V; RL = 1.8 Ω; VGS = 10 V;
RG(ext) = 5 Ω
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V
Min Typ Max Unit
-
43.7 -
nC
-
7629 -
pF
-
968 -
pF
-
591 -
pF
-
32
-
ns
-
50
-
ns
-
87
-
ns
-
58
-
ns
-
0.78 1.2 V
-
44
-
ns
-
67
-
nC
400
ID
(A)
300
200
10
8
003aah664
6
5.5
15
RDSon
(mΩ)
10
003aah665
5
5
100
VGS(V) = 4.5
0
0
0.5
1
1.5 VDS(V) 2
0
0
5
10
15 VGS(V) 20
Fig. 6.
Tj = 25 °C; tp = 300 μs
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
PSMN2R6-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 February 2013
© NXP B.V. 2013. All rights reserved
6 / 13
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese