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| PSMN2R6-60PS Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel 60 V, 2.6 mΩ standard level MOSFET in SOT78 | |||
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NXP Semiconductors
PSMN2R6-60PS
N-channel 60 V, 2.6 m⦠standard level MOSFET in SOT78
Symbol
Parameter
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Conditions
Tmb = 25 °C; Fig. 2
Tmb = 25 °C
[1]
pulsed; tp ⤠10 µs; Tmb = 25 °C
ID = 150 A; Vsup ⤠60 V; RGS = 50 Ω;
VGS = 60 V; Tj(init) = 25 °C; unclamped;
Fig. 3
[1] Continuous current is limited by package.
250
ID
(A)
200
003aak809
120
Pder
(%)
80
(1)
150
Min Max Unit
-
326 W
-55 175 °C
-55 175 °C
-
260 °C
-
150 A
-
961 A
-
411 mJ
03aa16
100
40
50
Fig. 1.
0
0
30
60
90 120 150 180
Tj (°C)
(1) Capped at 150A due to package
Continuous drain current as a function of
mounting base temperature
0
0
50
100
150
200
Tmb (°C)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN2R6-60PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 February 2013
© NXP B.V. 2013. All rights reserved
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