PSMN015-100B Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

NXP Semiconductors
PSMN015-100B
N-channel TrenchMOS SiliconMAX standard level FET
30
R_DSon
(mΩ)
T_j = 25 °C
20
10
V_GS = 5 V
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5.2 V
5.4 V
5.6 V
6V
10 V
3
a
2
1
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0
0
10
20
30
40
50
I_D (A)
0
-60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
V_GS
(V)
8
I_D = 75 A
T_j = 25 °C
V_DD = 20 V
6
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80 V
4
2
0
0
25
50
75
100
Q_G (nC)
10⁴
C
(pF)
10³
10²
10^−1
1
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C_iss
C_oss
C_rss
10 _{VDS (V)} 10²
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN015-100B_6
Product data sheet
Rev. 06 — 17 December 2009
© NXP B.V. 2009. All rights reserved.
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