PSMN015-100B Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

NXP Semiconductors
120
I_der
(%)
80
PSMN015-100B
N-channel TrenchMOS SiliconMAX standard level FET
03an67
120
P_der
(%)
80
03aa16
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS /I_D
DC
10
1
1
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03am53
t _p = 10 μs
100 μ s
1 ms
10 ms
10²
10³
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PSMN015-100B_6
Product data sheet
Rev. 06 — 17 December 2009
© NXP B.V. 2009. All rights reserved.
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