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PSMN015-100B Datasheet, PDF (4/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor
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NXP Semiconductors
PSMN015-100B
N-channel TrenchMOS SiliconMAX standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from see Figure 4
junction to mounting
base
thermal resistance from mounted on a printed-circuit board;
junction to ambient
minimum footprint; vertical in still air
Min Typ Max Unit
-
-
0.5 K/W
-
50
-
K/W
10
Zth(j-mb)
(K/W)
1
03am52
Fig 4.
δ = 0.5
10−1
10−2
0.2
0.1
0.05
0.02
single pulse
10−3
10−5
10−4
10−3
P
tp
δ=
T
tp
T
10−2
tp (s)
t
10−1
Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN015-100B_6
Product data sheet
Rev. 06 — 17 December 2009
© NXP B.V. 2009. All rights reserved.
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