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PSMN015-100B Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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PSMN015-100B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 06 â 17 December 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Low conduction losses due to low
on-state resistance
 Rated for avalanche ruggedness
1.3 Applications
 DC-to-DC convertors
 Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 75 A;
VDS = 80 V; Tj = 25 °C;
see Figure 11
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
see Figure 9 and 10
Min Typ Max Unit
-
-
100 V
-
-
75 A
-
-
300 W
-
35 -
nC
-
12 15 mâ¦
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