PHP79NQ08LT Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
40
2.5
R_DSon
(mΩ)
30
20
10
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2.8
3
3.2
3.5
V_GS (V) = 4
4.5
5
10
0
0
20
40
60
80
I_D (A)
PHP79NQ08LT
N-channel TrenchMOS logic level FET
2.4
a
1.6
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0.8
0
−60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
5
V_GS
(V)
4
3
2
1
0
0
V_DD = 14 V
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V_DD = 60 V
10
20
30
40
Q_G (nC)
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
PHP79NQ08LT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 26 April 2010
© NXP B.V. 2010. All rights reserved.
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