PHP79NQ08LT Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

PHP79NQ08LT
N-channel TrenchMOS logic level FET
Rev. 03 — 26 April 2010
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Suitable for logic level gate drive
sources
1.3 Applications
„ DC-to-DC convertors
„ General purpose power switching
„ Motors, lamps and solenoids
„ Uninterruptible power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source
T_j ≥ 25 °C; T_j ≤ 175 °C
voltage
I_D
drain current
T_mb = 25 °C; V_GS = 10 V
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 9;
see Figure 10
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 5 V; I_D = 25 A;
V_DS = 60 V; T_j = 25 °C;
see Figure 11; see Figure 12
Min Typ Max Unit
-
-
75 V
-
-
73 A
-
-
157 W
-
14 16 mΩ
-
14 -
nC