PHP79NQ08LT Datasheet, PDF (3/13 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
PHP79NQ08LT
N-channel TrenchMOS logic level FET
Table 4. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
I_SM
peak source current
Avalanche ruggedness
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C; I_D = 35 A;
V_sup ≤ 75 V; R_GS = 50 Ω; t_p = 0.07 ms;
unclamped
Min Typ Max Unit
-
-
270 A
-
-
120 mJ
120
I_der
(%)
80
03aa24
120
P_der
(%)
80
03aa16
40
40
0
0
50
100
150
200
T_mb (°C)
0
0
50
100
150
200
T_mb (°C)
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
10³
I_D
(A)
10²
Limit R_DSon = V_DS/I_D
10
DC
1
1
10
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aaa910
t_p = 10 μs
1ms
10 ms
100 ms
1s
10²
10³
V_DS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP79NQ08LT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 26 April 2010
© NXP B.V. 2010. All rights reserved.
3 of 13