PHP29N08T Datasheet, PDF (7/12 Pages) NXP Semiconductors – TrenchMO standard level FET

NXP Semiconductors
80
R_DSon
(mΩ)
T_j = 25 °C
60
40
V_GS = 7 V
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7.5 V
8V
9V
11 V
PHP29N08T
N-channel TrenchMOS standard level FET
3
03ac63
a
2
1
20
0
10
20
30
I_D (A)
0
-60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical value
factor as a function of junction temperature
15
V_GS
(V)
I_D = 29 A
T_j = 25 °C
10
V_DD = 15 V
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60 V
37.5 V
10⁴
C
(pF)
10³
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C_iss
5
10²
C_oss
C_rss
0
0
10
20
30
Q_G (nC)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
10
10^−1
1
10
10²
V_DS (V)
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP29N08T_2
Product data sheet
Rev. 02 — 12 March 2009
© NXP B.V. 2009. All rights reserved.
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