PHP29N08T Datasheet, PDF (2/12 Pages) NXP Semiconductors – TrenchMO standard level FET

NXP Semiconductors
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base, connected to
drain
PHP29N08T
N-channel TrenchMOS standard level FET
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78
(TO-220AB; SC-46)
Table 3. Ordering information
Type number
Package
Name
Description
PHP29N08T
TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
SC-46
TO-220AB
Version
SOT78
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T_j ≥ 25 °C; T_j ≤ 175 °C
T_j ≤ 175 °C; T_j ≥ 25 °C; R_GS = 20 kΩ
V_GS = 11 V; T_mb = 100 °C; see Figure 1
V_GS = 11 V; T_mb = 25 °C; see Figure 1;
see Figure 3
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
t_p ≤ 10 µs; pulsed; T_mb = 25 °C; see Figure 3
T_mb = 25 °C; see Figure 2
I_S
source current
T_mb = 25 °C
I_SM
peak source current t_p ≤ 10 µs; pulsed; T_mb = 25 °C
Min Max Unit
-
75
V
-
75
V
-30 30
V
-
19.2 A
-
27
A
-
108 A
-
88
W
-55 175 °C
-55 175 °C
-
27
A
-
108 A
PHP29N08T_2
Product data sheet
Rev. 02 — 12 March 2009
© NXP B.V. 2009. All rights reserved.
2 of 12