PHP29N08T Datasheet, PDF (1/12 Pages) NXP Semiconductors – TrenchMO standard level FET

PHP29N08T
N-channel TrenchMOS standard level FET
Rev. 02 — 12 March 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ High noise immunity due to high gate
threshold voltage
„ Low conduction losses due to low
on-state resistance
1.3 Applications
„ Industrial motor control
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 11 V;
see Figure 1; see Figure 3
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 10 V; I_D = 29 A;
V_DS = 60 V; T_j = 25 °C;
see Figure 11
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 11 V; I_D = 14 A;
T_j = 175 °C; see Figure 9;
see Figure 10
V_GS = 11 V; I_D = 14 A;
T_j = 25 °C; see Figure 9;
see Figure 10
Min Typ Max Unit
-
-
75 V
-
-
27 A
-
-
88 W
-
9
-
nC
-
96 120 mΩ
-
40 50 mΩ