PHP29N08T Datasheet, PDF (6/12 Pages) NXP Semiconductors – TrenchMO standard level FET

NXP Semiconductors
PHP29N08T
N-channel TrenchMOS standard level FET
30
I_D
(A)
T_j = 25 °C
20
11 V 9 V
03aj07
8V
7.5 V
7V
30
I_D
(A)
V_DS > I_D × R_DSon
20
03aj09
10
6.5 V
V_GS = 6 V
0
0
0.5
1
1.5
2
V_DS (V)
10
0
0
175 °C
T_j = 25 °C
2
4
6
8
10
V_GS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^−2
I_D
(A)
10^−3
10^−4
03aj13
min
typ
max
6.4
V_GS(th)
(V)
4.8
3.2
03aj14
max
typ
min
10^−5
1.6
10^−6
2
3
4
5
6
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PHP29N08T_2
Product data sheet
Rev. 02 — 12 March 2009
© NXP B.V. 2009. All rights reserved.
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