PHP28NQ15T Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP28NQ15T
N-channel TrenchMOS standard level FET
100
R_DSon ^VGS ^{(V) = 4}
4.2
(mΩ)
80
60
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4.4
4.6
4.8
5
6
10
40
20
0
0
10
20 _{ID (A)} 30
3
a
2
03al51
1
0
−75
−25
25
75
125
175
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
10
V_{GS ID = 25 A}
(V) _{Tj = 25 °C}
8
6
75 V
30 V
4
2
0
0
10
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V_DD = 120 V
20 _{QG (nC)} 30
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
PHP28NQ15T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 22 March 2010
© NXP B.V. 2010. All rights reserved.
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