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PHP28NQ15T Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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PHP28NQ15T
N-channel TrenchMOS standard level FET
Rev. 02 â 22 March 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
 Increased efficiency during switching
due to low body diode recovered
charge
 Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
 Class-D audio amplifiers
 DC-to-AC inverters
 DC-to-DC convertors
 Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
VDS
drain-source voltage Tj ⥠25 °C; Tj ⤠175 °C
ID
drain current
Tj = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
Dynamic characteristics
QGD
gate-drain charge VGS = 10 V; ID = 10 A;
VDS = 75 V; Tj = 25 °C;
see Figure 12 and 11
Static characteristics
RDSon
drain-source
VGS = 10 V; ID = 18 A;
on-state resistance Tj = 25 °C; see Figure 9 and 10
Min Typ Max Unit
-
-
150 V
-
-
28.5 A
-
-
150 W
-
7.5 -
nC
-
54 65 mâ¦
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