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| PHP28NQ15T Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
PHP28NQ15T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = -55 °C
ID = 250 µA; VGS = 0 V; Tj = 25 °C
135 -
150 -
VGS(th)
gate-source threshold ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 7 -
-
voltage
and 8
-
V
-
V
4.4 V
ID = 1 mA; VDS = VGS; Tj = 175 °C; see Figure 7 1
-
-
V
and 8
ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 7 2
3
4
V
and 8
IDSS
IGSS
RDSon
drain leakage current VDS = 120 V; VGS = 0 V; Tj = 25 °C
-
VDS = 120 V; VGS = 0 V; Tj = 175 °C
-
gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
drain-source on-state VGS = 10 V; ID = 18 A; Tj = 175 °C; see Figure 9 -
resistance
and 10
-
1
µA
-
500 µA
10
100 nA
10
100 nA
145 175 mâ¦
VGS = 10 V; ID = 18 A; Tj = 25 °C; see Figure 9 -
and 10
54
65
mâ¦
RG
internal gate resistance f = 1 MHz; Tj = 25 °C
(AC)
-
1.1 -
â¦
Dynamic characteristics
QG(tot)
total gate charge
ID = 10 A; VDS = 75 V; VGS = 10 V; Tj = 25 °C;
-
24
-
nC
see Figure 11 and 12
QGS
gate-source charge
ID = 10 A; VDS = 75 V; VGS = 10 V; Tj = 25 °C;
-
6
-
nC
QGD
gate-drain charge
see Figure 12 and 11
-
7.5 -
nC
VGS(pl)
gate-source plateau ID = 25 A; VDS = 75 V; Tj = 25 °C; see Figure 11 -
5
-
V
voltage
and 12
Ciss
input capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
-
1250 -
pF
Coss
output capacitance
see Figure 13
-
185 -
pF
Crss
reverse transfer
capacitance
-
55
-
pF
td(on)
tr
turn-on delay time
rise time
VDS = 75 V; RL = 3 â¦; VGS = 10 V;
RG(ext) = 5.6 â¦; Tj = 25 °C
-
12
-
ns
-
20
-
ns
td(off)
turn-off delay time
VDS = 75 V; RL = 3 â¦; VGS = 10 V; RG(ext) 5.6 â¦; -
12
-
ns
Tj = 25 °C
tf
fall time
VDS = 75 V; RL = 3 â¦; VGS = 10 V;
RG(ext) = 5.6 â¦; Tj = 25 °C
-
55
-
ns
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 14 -
0.87 1.2 V
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 25 V; Tj = 25 °C
-
110 -
ns
-
170 -
nC
PHP28NQ15T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 22 March 2010
© NXP B.V. 2010. All rights reserved.
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