PHP28NQ15T Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP28NQ15T
N-channel TrenchMOS standard level FET
003aab104
30
30
V_GS (V) =
10 6 4.8
4.6
I_D
I_D
(A)
(A)
4.4
20
20
4.2
10
4
10
003aab106
T_j = 150 °C
25 °C
0
0
1
2 _{VDS (V)} 3
0
0
1
2
3
4 _{VGS (V)} 5
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
10^−1
I_D
(A)
10^−2
03aa35
min typ max
5
V_GS(th)
(V)
4
max
03aa32
10^−3
10^−4
3
typ
2
min
10^−5
1
10^−6
0
2
4
6
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PHP28NQ15T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 22 March 2010
© NXP B.V. 2010. All rights reserved.
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