PHP23NQ11T Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP23NQ11T
N-channel TrenchMOS standard level FET
0.2
R_DSon
(Ω)
0.15
4.6 V 4.8 V 5 V 5.2 V
03ao53
T_j = 25 °C
5.4 V
0.1
0.05
0
0
6V
8 V _{VGS = 10 V}
5
10
15
20
I_D (A)
3
03aa29
a
2
1
0
-60
0
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
15
V_GS
(V)
I_D = 23 A
T_j = 25 °C
10
V_DD = 20 V
80 V
03ao57
10⁴
C
(pF)
10³
03ao56
C_iss
C_oss
5
10²
0
0
10
20
30
40
Q_G (nC)
10
10^−1
1
C_rss
10
10²
V_DS (V)
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHP23NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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