PHP23NQ11T Datasheet, PDF (6/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PHP23NQ11T
N-channel TrenchMOS standard level FET
20
I_D
(A)
15
10
5
00
V_GS = 10 V _{8 V}
6V
0.5
1
03ao52
Tj = 25 °C
5.4 V
5.2 V
5V
4.8 V
4.6 V
4.4 V
1.5
2
V_DS (V)
20
I_D
(A)
V_DS > I_D x R_DSon
15
03ao54
10
5
150 °C
T_j = 25 °C
0
0
2
4 _{VGS (V)} 6
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
5
V_GS(th)
(V)
4
max
03aa32
10^−1
I_D
(A)
10^−2
03aa35
min typ max
3
typ
10^−3
2
min
10^−4
1
10^−5
0
−60
0
60
120
180
T_j (°C)
10^−6
0
2
4
6
V_GS (V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PHP23NQ11T_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 February 2010
© NXP B.V. 2010. All rights reserved.
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